Adsorption of 3He on Cesium

D. Ross, J. A. Phillips, J. E. Rutledge and P. Taborek
J. Low Temp. Phys., 106, 81(1997)



Abstract

Introduction

Experiment

Results

Discussion

References





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Experiment

We have measured adsorption isotherms using a quartz crystal microbalance [9,10]. The microbalances were used at their third harmonic at a frequency of ~5.5 MHz, so that their mass sensitivity was approximately 0.133 Hz/monolayer of liquid 3He. The apparatus consisted of an OFHC copper vacuum can which contained two microbalances. Cesium was evaporated from a source of pure elemental metal onto both electrodes of one of the microbalances. The microbalance and the vacuum can were maintained at a temperature less than ~6 K during the evaporation to avoid contamination of the highly reactive cesium surface. The second microbalance was left with bare gold electrodes. The purity of the 3He used was >99.999%.
Measurements were conducted on three different cesium substrates. The first was studied down to ~0.4 K using a recirculating 3He refrigerator for cooling, while for the second and third surfaces the temperature range was extended by installing a dilution refrigerator. In order to concentrate on the steepness of the steps, most of the isotherms in the third set of data were not run completely to saturation. Consequently, the steepness of the steps was accurately measured but their location was not. The positions of the steps measured in the first two data sets and in the completed isotherms of the third data set are identical within the accuracy of the experiment. The measured steepness of the steps (-df/dm) varied by ~30% from one surface to the next, though in each case the temperature dependence of the steepness was similar.
In order to asses the effect of substrate inhomogeneity on the prewetting behavior, the substrates were annealed. This was done by warming the cesium coated microbalance to approximately 80 K for about 30 minutes. During annealing, the vacuum can was again maintained at a temperature below ~6 K. Measurements were made on the first substrate both before and after annealing, while the second and third surfaces were annealed immediately after they were evaporated.
The experimental results are presented as the shift of the resonant frequency of the microbalance,-Df , as a function of the chemical potential of the 3He as shown in Figs. 1-3. Because the saturated vapor pressure of 3He spanned 6 orders of magnitude over the temperature range of this experiment, a variety of techniques were required to measure the chemical potential. For temperatures above ~0.55 K a room temperature capacitance manometer was used to determine the pressure. For temperatures between ~0.3 and ~0.6, an in situ capacitance manometer was used. In these two cases Dmwas calculated from the pressure using the usual ideal gas approximation, Dm= m- m0= T ln(P/P0). Here m0 and P0 are the chemical potential and pressure at liquid-vapor coexistence, respectively.
Below ~0.3 K the pressure was too small to be accurately measured with the in situ manometer, so a new technique had to be devised to measure Dm. We found that the gold plated microbalance could be used as a chemical potential meter. This technique relies on the observation that the frequency shift of the gold plated microbalance is a function of only the chemical potential offset, independent of temperature [11]. This behavior can be seen in Fig. 1 which shows the frequency shift of the gold plated microbalance plotted vs. Dm for three different temperatures, T = 0.330 K, T = 0.533 K, and T = 1.007 K. A fit of the isotherm at T = 0.330 K was used to convert the measured frequency shifts of the gold-plated microbalance to chemical potentials. The inset graph of Fig. 1 shows the data and the fit curve for chemical potential offsets near the location of the steps found in the 3He adsorption isotherms. The ~10 mHz shift between the 0.533 K data and the other two data sets provides an estimate for the error in this measurement method, which in this case leads to a systematic error of ±0.02 K in the chemical potential. The typical noise in our frequency measurements is ±5 mHz. As a result the random error in our determination of Dm is ±0.01 K.