Split-gate devices for excitons

An indirect exciton (IX) is a bound state of an electron and a hole in spatially separated layers. Two-dimensional IXs can be created optically in heterostructures containing double quantum wells or atomically thin semiconductors. I will review experimental and theoretical work on the transport of IXs through split-gate devices that realize tunable nano-constrictions. The first-generation devices demonstrate proof-of-principle control of IX flow through such constrictions with both gate voltage and excitation power. Theoretical modeling suggests that various quantum transport phenomena, for example, conductance quantization, single-slit diffraction, and two-slit interference are also experimentally realizable. I will discuss similarities and differences between these phenomena and their counterparts in electronic split-gate devices.