Probing unconventional electron Landau levels with strong interaction effects in atomically thin transition metal dichalcogenides

Speaker: 
Ning Wang
Institution: 
Department of Physics and Center for Quantum Materials, the Hong Kong University of Science and Technology, Hong Kong
Date: 
Wednesday, March 14, 2018
Time: 
4:00 pm
Location: 
NS2 1201
Abstract:
Atomically thin transition metal dichalcogenides (TMDCs) are emerging as a new platform for exploring many-body effects. Coulomb interactions are markedly enhanced in these materials because of the reduced dimensionality and large effective masses. Although many-body excitonic effects in TMDCs have been extensively studied by optical means, not until recently did probing their strongly correlated electronic effects become possible in transport. In this talk, I demonstrate our recent experimental study on quantum transport of few-layer WSe2 and MoS2 with unconventional electron Landau levels (LLs) and strong interaction effects. We fabricate high-quality n-type MoS2 and p-type WSe2 devices and study their valley-resolved SdH oscillations relevant to the spin-valley locked massive Dirac electron LLs. Encapsulating these TMDCs in ultra-clean hexagonal boron nitride sheets effectively eliminates impurity scattering and provides clean interfaces for making high-quality low-temperature ohmic contacts. Few-layer WSe2 and MoS2 field-effect devices with mobilities up to 20,000 cm2/V s have been achieved at cryogenic temperatures. We observe interesting quantum Hall transport phenomena involving the Q valley, Γ valley and K valley, such as the Q valley Zeeman effect in all odd-layer MoS2 devices and the spin Zeeman effect in all even-layer MoS2 devices and highly density-dependent quantum Hall states of Γ valley holes below 12T, whose predominant sequences alternate between odd- and even-integers. By tilting the magnetic field to induce Landau level crossings, we show that the strong Coulomb interaction enhances the Zeeman-to-cyclotron energy ratio from 2.67 to 3.55 as the density is reduced from 5.7 to 4.0×1012 cm-2, giving rise to the even-odd alternation. With decreasing the carrier density in the conductance band (K valley) of few-layer MoS2, we observe LL crossing induced valley ferrimagnet-to-ferromagnet transitions, as a result of the interaction enhancement of the g-factor from 5.6 to 21.8. Near integer ratios of Zeeman-to-cyclotron energies, we discover LL anti-crossings. Our results provide compelling evidence for many-body interaction effects in few-layer WSe2 and MoS2.
Host: 
Xiaoqing Pan